Publications
This section contains publications published by ISI over the past several decades.
2014
Network analysis system and method utilizing collected metadata
BS Whitmore, WJ La Cholter, G Lawler
US Patent 8,631,124, 2014
Application of a direct regional activity characterization approach to focal uptake activity quantification in pinhole SPECT
Andrew Rittenbach, Jingyan Xu, Chi Liu, Mahmoud Razavian, Mehran Sadeghi, Benjamin Tsui
Journal of Nuclear Medicine 55 (supplement 1), 2119-2119, 2014
Minimizing Energy Under Performance Constraints on Embedded Platforms.
Connor Imes, Henry Hoffmann
EWiLi, 2014
METHOD OF DEVICE ISOLATION IN CLADDING Si THROUGH IN SITU DOPING
AP Jacob, MK Akarvardar, BB Doris, A Khakifirooz
US Patent App. 13/921,265, 2014
Cross junction spin wave logic architecture
Kasuni Nanayakkara, Alexander Anferov, Ajey P Jacob, S James Allen, Alexander Kozhanov
IEEE Transactions on Magnetics 50 (11), 1-4, 2014
Spin transistor having multiferroic gate dielectric
KL Wang, A Poovannummoottil, F Xiu
US Patent 8,860,006, 2014
Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process
JA Fronheiser, JA Wahl, K Akarvardar, AP Jacob, DT Pham
US Patent 8,853,019, 2014
Methods of forming low defect replacement fins for a finfet semiconductor device and the resulting devices
J Fronheiser, AP Jacob, WP Maszara, K Akarvardar
US Patent App. 13/839,998, 2014
Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties
Shailesh Madisetti, Vadim Tokranov, Andrew Greene, Michael Yakimov, Makoto Hirayama, Serge Oktyabrsky, Steven Bentley, Ajey P Jacob
Journal of Vacuum Science & Technology B 32 (5), 2014
Integrated circuits and methods for fabricating integrated circuits with cladded non-planar transistor structures
KM Akarvardar, AP Jacob
US Patent 8,809,947, 2014
Bottom oxidation through STI (BOTS)—A novel approach to fabricate dielectric isolated FinFETs on bulk substrates
K Cheng, S Seo, J Faltermeier, D Lu, T Standaert, I Ok, A Khakifirooz, R Vega, T Levin, J Li, J Demarest, C Surisetty, D Song, H Utomo, R Chao, H He, A Madan, P DeHaven, N Klymko, Z Zhu, S Naczas, Y Yin, J Kuss, A Jacob, D Bae, K Seo, W Kleemeier, R Sampson, T Hook, B Haran, G Gifford, D Gupta, H Shang, H Bu, M Na, P Oldiges, T Wu, B Doris, K Rim, E Nowak, R Divakaruni, M Khare
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
Methods of forming fins for a FinFET semiconductor device using a mandrel oxidation process
BJ Pawlak, S Bentley, A Jacob
US Patent 8,716,156, 2014
Methods of forming spin torque devices and structures formed thereby
DE Nikonov, GI Bourianoff, AP Jacob
US Patent 8,697,454, 2014
P-Type III-Sb MOSFET on a Metamorphic Substrate: Towards All III-V CMOS
Shailesh Madisetti, Vadim Tokranov, Andrew Greene, Michael Yakimov, Shun Sasaki, Makoto Hirayama, Steven Novak, Steven Bentley, Ajey Jacob, Serge Oktyabrsky
ECS Transactions 61 (3), 163, 2014
Methods of forming FinFET devices with alternative channel materials
WP Maszara, AP Jacob, NV LiCausi, JA Fronheiser, K Akarvardar
US Patent 8,673,718, 2014
GaSb on Si: structural defects and their effect on surface morphology and electrical properties
Shailesh Kumar Madisetti, Vadim Tokranov, Andrew Greene, Steven Novak, Michael Yakimov, Serge Oktyabrsky, Steven Bentley, Ajey P Jacob
MRS Online Proceedings Library (OPL) 1635, 115-120, 2014
Construction of all general symmetric informationally complete measurements
Gilad Gour, Amir Kalev
Journal of Physics A: Mathematical and Theoretical 47 (33), 335302, 2014
Quantum process tomography of unitary and near-unitary maps
Charles H Baldwin, Amir Kalev, Ivan H Deutsch
Physical Review A 90 (1), 012110, 2014
Mutually unbiased probability-operator measurements
Amir Kalev
Journal of Physics A: Mathematical and Theoretical 47 (26), 265301, 2014
Non-ideal classical measurements and quantum measurements: a comparative study
Lars M Johansen, Amir Kalev, Pier A Mello
arXiv preprint arXiv:1405.6439, 2014