Publications
This section contains publications published by ISI over the past several decades.
2016
Methods of forming semiconductor devices including an electrically-decoupled fin
S Bentley, AP Jacob
US Patent 9,293,324, 2016
Forming embedded source and drain regions to prevent bottom leakage in a dielectrically isolated fin field effect transistor (FinFET) device
AP Jacob, MK Akarvardar
US Patent 9,293,587, 2016
Method for single fin cuts using selective ion implants
X Cai, AP Jacob, R Xie, B Doris, K Cheng, JR Cantone, S Mignot, ...
US Patent 9,287,130, 2016
Methods of forming metastable replacement fins for a finfet semiconductor device by performing a replacement growth process
AP Jacob, MK Akarvardar, J Fronheiser, WP Maszara
US Patent App. 14/931,277, 2016
Methods of removing portions of at least one fin structure so as to form isolation regions when forming FinFET semiconductor devices
AP Jacob
US Patent 9,269,628, 2016
Retrograde doped layer for device isolation
AP Jacob, SJ Bentley, MK Akarvardar, JA Fronheiser, K Cheng, BB Doris, ...
US Patent App. 14/882,308, 2016
Uniaxially-strained fd-soi finfet
P Morin, M Vinet, L Grenouillet, AP Jacob
US Patent 9,252,208, 2016
Dual-width fin structure for finfets devices
MK Akarvardar, AP Jacob, A Knorr
US Patent App. 14/341,423, 2016
Solid-state supercapacitor
BS Dunn, CO Chui, AP Jacob, D Membreno, L Smith
US Patent 9,245,694, 2016
Methods of forming substantially defect-free, fully-strained silicon-germanium fins for a FinFET semiconductor device
MK Akarvardar, JA Fronheiser, AP Jacob
US Patent 9,245,980, 2016
Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth process
AP Jacob, MK Akarvardar, J Fronheiser, WP Maszara
US Patent 9,240,342, 2016
Methods of forming isolated channel regions for a finfet semiconductor device and the resulting device
AP Jacob, N Loubet
US Patent App. 14/859,729, 2016
Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
R Xie, X Cai, AC Wei, Q Zhang, AP Jacob, M Hargrove
US Patent 9,236,258, 2016
Methods of forming replacement gate structures and fins on FinFET devices and the resulting devices
R Xie, AP Jacob
US Patent 9,236,479, 2016
Quantum Measurement of Spin Correlations in a Symmetric Many-Body Statef1
Ezad Shojaee, Amir Kalev, Ivan Deutsch
Bulletin of the American Physical Society 61, 2016
Fisher-symmetric informationally complete measurements for pure states
Nan Li, Christopher Ferrie, Jonathan A Gross, Amir Kalev, Carlton M Caves
Physical review letters 116 (18), 180402, 2016
Strictly-complete measurements for bounded-rank quantum-state tomography
Charles H Baldwin, Ivan H Deutsch, Amir Kalev
Physical Review A 93 (5), 052105, 2016
Quantum Measurement of Spin Correlations in a Symmetric Many-Body State∖ f 1
Ezad Shojaee, Amir Kalev, Ivan Deutsch, Cquic Team
APS Division of Atomic, Molecular and Optical Physics Meeting Abstracts 2016 …, 2016
Quantum tomography of near-unitary processes in high-dimensional quantum systems
Nathan Lysne, Hector Sosa Martinez, Poul Jessen, Charles Baldwin, Amir Kalev, Ivan Deutsch
APS Division of Atomic, Molecular and Optical Physics Meeting Abstracts 2016 …, 2016